Abstract
The single phase of Bi-doped Mg2Si0.3Sn0.7compounds have been successfully fabricated by solid state reaction and spark plasma sintering (SPS). The effect of Bi doping concentration on the thermoelectric properties of Mg2Si0.3Sn0.7is investigated. The doping of Bi atom results in the increase of carrier concentrations and ensures the increase of electrical conductivity. Although the thermal conductivity and Seebeck coefficient shows a slight increase, the figure of merit of Mg2Si0.3Sn0.7compounds still increases with the increasing contents of Bi-doping. When Bi-doping content is 1.5at%, the Mg2Si0.3Sn0.7compound obtained the maximum value,ZT, is 1.03 at 640 K.
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