Abstract
A novel stacked emitter based on phosphorus‐doped diamond with a nitrogen‐doped diamond surface layer was fabricated for enhanced thermionic emission. The emission current of the emitter was 18 mA cm−2 at 893 K and exhibited a significant increase compared to the emission current 6 mA cm−2 observed in a nitrogen‐doped emitter and 1 mA cm−2 observed in a phosphorus‐doped emitter. This remarkable emission is attributed to the reduction of the film resistance owing to the presence of a phosphorus‐doped layer and to a low effective work function with weak upward band bending owing to the presence of the nitrogen‐doped surface layer.
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