Abstract
In order to enhance the thermal stability of corundum-structured gallium oxide (α-Ga2O3), which is attractive for use in wide-band-gap heterostructure devices and amenable to band gap and function engineering but suffers from phase transformation in high-temperature growth (>500 °C) and treatments (>550 °C), we attempted aluminum (Al) doping. The thermal stability of the films was enhanced by increasing the Al doping concentration, and under the best doping conditions where the Al concentration was negligible compared with the basic chemical composition of Ga2O3, the growth and successive thermal treatment temperatures were increased to as high as 650 and 750 °C, respectively, without the marked appearance of the β-gallia phase. Under the doping conditions above, the inclusion of Al was not negligible at the growth temperature of 800 °C and the film composition was expressed as an alloy of α-(Al0.2Ga0.8)2O3, but this film remained as the α-phase at annealing temperatures up to 900 °C. Enhanced thermal stability widens the device process windows, contributing to the formation of various high-performance devices.
Published Version
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