Abstract
By using a two-dimensional ensemble Monte Carlo method, we have studied the terahertz-frequency response of a self-switching device (SSD), which is a semiconductor rectifier consisting of an asymmetric nanochannel. The simulations reveal that the performance can be improved by adjusting the shape and dielectric material filling of the insulating trenches that define the SSD. We show that the rectified current of the SSD has a nonmonotonic frequency dependence with a pronounced peak occurring just below the cutoff frequency. Through optimizations of the geometry, the peak current can reach twice that at low frequencies, enabling not only a higher detection sensitivity but also a degree of frequency selectivity. The effect is discussed in terms of a localized surface plasma oscillation in the asymmetric nanostructure.
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