Abstract
The influence of single and double forming on the switching stability of AZO/ZnO1−x/ITO transparent resistive memory devices was investigated. Devices that underwent single forming exhibited severe switching instability, where as those that underwent double forming exhibited excellent switching uniformity. The quantity of conducting filaments can be limited by applying the two-step forming process. Consequently, the set/reset process can be controlled, enhancing switching stability. Satisfactory endurance with an acceptable ON/OFF ratio of 102 and satisfactory retention behavior of 104 s at room temperature confirmed the reliability of optimized devices. Furthermore, highly transparent devices (transparency of approximately 85% in visible range) have been fabricated.
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