Abstract
This study examined the characteristics of localized surface plasmon resonance (LSPR)-enhanced GaN-based light-emitting diodes (LEDs) fabricated using colloidal silver nanoparticles (cAg NPs). cAg NPs were deposited on a p-GaN surface using a low-cost metal-assisted chemical etching (MAC-etch) method. MAC-etching can increase the light extraction efficiency (LEE) by producing a roughened p-GaN surface and LSPR produces high internal quantum efficiency (IQE) through an interaction of cAg NPs with the emitted light. Field-emission scanning electron microscopy and atomic force microscopy of the surface revealed an etched p-GaN surface with cAg NPs and a roughness of ∼40-45 nm. In the MAC-etch samples, XRD showed that the cAg NPs had (111) and (200) preferred orientations. In addition, the calculated grain size of the 60 min cAg NPs was 50% of the grain size of the 30 min sample. The optical characteristics of the samples were measured by photoluminescence (PL) spectroscopy, ultraviolet/visible (UV/Vis) spectroscopy, and electroluminescence (EL) spectroscopy. The MAC-etch samples showed a higher PL intensity than the normal-LEDs. The UV/Vis absorbance spectra showed that the cAg NPs on the p-GaN surface generated LSPR. The EL intensity of the MAC-etch sample for 30 min increased by approximately 25%. The results of this investigation herald the development of MAC-etching for the low-cost GaN-based LED applications that are commercially viable large-scale.
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