Abstract
Currently, there is active research on oxide semiconductors suitable for the next-generation integration technology, Monolithic 3D Integration (M3D). Among back-end-of-line (BEOL) compatible material candidates, SnO2, with its high mobility and wide bandgap (3.6 eV), is extensively utilized in the fields of solar cells and displays, semiconductors benefiting from excellent power efficiency, high price competitiveness, and transparency. Furthermore, the fluorine-doped tin oxide (FTO) is a highly transparent and conductive semiconductor, serving as a Transparent Conducting Oxide (TCO) widely utilized in various electronic and optoelectronic devices.In this study, we fabricated SnO2 Thin Film Transistors (TFTs) utilizing SnO2 deposited by Thermal-Atomic Layer Deposition (T-ALD) as the channel layer. Additionally, the surface of the SnO2 in the Source/Drain regions was n+ doped through fluorination to enhance ohmic characteristics between the electrode and the channel layer. In this process, we have successfully fabricated SnO2 TFTs demonstrating excellent electrical characteristics, with a very high on/off current ratio exceeding 1013 and a low Subthreshold Swing (S.S) of 0.18 V/dec, achieved by effectively controlling the conductivity of SnO2. These results emphasize the potential of ALD SnO2 channels for high-performance transistors that are compatible with back-end-of-line processes in Si technology. Figure 1
Published Version
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