Enhanced sensitivity of low-cost fabricated fluorine doped ZnO metal semiconductor metal photodetector

Abstract

The literature mostly reports on thin-film fluorine-doped zinc oxide (FZnO) and has yet to fabricate metal semiconductor metal (MSM) photodetectors (PDs) based on FZnO nanostructures for the enhancement of photoresponse parameters despite their huge potential. In this work, ZnO film of 32 nm-thick was deposited and used as a seed layer on silicon (Si) substrates with the aid of the radio frequency (RF) magnetron sputtering method. Vertically well-aligned FZnO nanorods (NRs) were later grown on the seeded substrates via a hydrothermal method and annealed for 1 h at 400 °C. The formation of well-aligned hexagonal NRs at low fluorine doping was revealed by field emission scanning microscopy (FESEM), and energy-dispersive X-ray (EDX) analysis confirmed the presence of fluorine doping. X-ray diffraction (XRD) investigation confirmed the growth of good crystal quality hexagonal wurtzite F–ZnO NRs along the (002) direction, and bandgaps were estimated using UV–Vis–NIR spectroscopy. Photoluminescence (PL) measurement has revealed the main emission peak for ultraviolet (UV) is centered at 375 nm and a red-shifted emission with fluorine doping has been identified. An F2 UV MSM PD device is fabricated. Upon exposure to UV light (395 nm) at 4 V, it displayed a high sensitivity of 1.1 × 105%, responsivity of 0.66 A/W, detectivity of 1.30 × 1010 Jones, a response time of 90 ms, and recovery time of 110 ms.