Enhanced radiation hardness and signal recovery in thin diamond detectors

N Skukan,I Sudić,W Kada,M Jakšić,M Pomorski

doi:10.1063/1.5081136

Abstract

Using the advantage of the high spatial resolution of the Ruđer Bošković Institute (RBI) ion microprobe, small areas of a thin membrane single crystal chemical vapor deposition (scCVD) diamond detector were intentionally damaged with a high-intensity 26-MeV oxygen ion beam at various fluences, producing up to ∼1018 vacancies/cm3. The response of the detector was tested with the ion beam-induced charge technique (IBIC) using a 2-MeV proton beam as a probe. The signal amplitudes decreased down to approximately 50% of the original value at low electric fields (&lt;10 V/μm) inside the detector. However, the increase of electric field to values of ∼100 V/μm completely recovers the signal amplitude. The results presented herein can facilitate the development of true radiation hard particle detectors.

Highlights

Μm-thin diamond detector with 26 MeV oxygen ions
The behavior of thin single-crystal chemical vapor deposition diamond radiation detectors1 under extreme conditions of high electric field is further explored in this work
Prior to the high fluence irradiation, the whole active area of the detector was scanned with the ion beam induced charge (IBIC) technique9 to assure a homogenous response of the detector and a charge collection efficiency of close to 100%

Summary

Introduction

Μm-thin diamond detector with 26 MeV oxygen ions. This particular ion and energy were chosen because the damage profile in the 6.15-μm membrane is relatively homogenous, according to the SRIM code simulation.7 an oxygen ion creates a large number of vacancies per volume compared to light ions. The behavior of thin single-crystal chemical vapor deposition (scCVD) diamond radiation detectors1 under extreme conditions of high electric field is further explored in this work.

Results

Conclusion