Abstract
Quantum efficiency in a polymer electroluminescence device is significantly improved by inserting a thin insulating layer with the thickness of tunneling range. Four times higher quantum efficiency was obtained without the increase of the threshold voltage. Poly(methyl methacrylate) Langmuir–Blodgett films were used as the thin tunneling barrier. The enhancement may result from the lowering of the effective barrier height for electron injection while increasing the effective barrier for hole injection. The effects improve the balanced injection of electrons and holes into the light-emitting devices.
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