Abstract
This paper investigates the effect of europium (Eu3+) doping on the crystal structure, dielectric and piezoelectric properties of lead lanthanum zirconate titanate (PLZT) thin film. For the present study, Pb0·92(La1-yEuy)0·08(Zr0·52Ti0·48)O3 (PLEZT) compositions with various Eu concentrations (y = 0.0, 0.3, 0.5 and 0.7) were prepared on Si/SiO2/Ti/Pt substrates by chemical solution deposition technique. The X-ray diffraction and Raman spectroscopy studies revealed the structural distortions in PLZT films with Eu doping. The piezoelectric charge coefficient showed significant enhancement with Eu doping for y = 0.5 composition, with good room temperature frequency stability. This improvement in the piezoelectric characteristics of PLEZT films is the result of stronger intrinsic contributions brought in by bigger c/a ratios and higher extrinsic contributions from non-180° domain wall motions.
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