Abstract
The dielectric properties of lead lanthanum zirconate titanate (PLZT) thin films on platinized silicon (Pt/Si) with and without ZrO2 insertion layers were investigated in the temperature range from 20 °C to 300 °C. Permittivity, dielectric loss tangent, and tunability were reduced for the samples with ZrO2 insertion layers compared to those without the layers. Additionally, the permittivity was less dependent on frequency over the broad temperature range studied (20–300 °C). The leakage current behavior of the PLZT films with and without ZrO2 insertion layers was also investigated, and on the basis of those results, a probable conduction mechanism has been suggested. The improved electrical properties in the PLZT with ZrO2 layers are attributed to the ZrO2 layer blocking the mobile ionic defects and reducing free charge carriers to transport.
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