Abstract
Transparent conducting Eu doped ZnO thin films are deposited on glass substrates by spray pyrolysis technique. The effect of Eu doping on surface morphology, structural and electrical properties of ZnO thin films are studied. The structural analysis reveal that the films are crystallized in the wurtzite phase with preferred orientation along (0 0 2) plane. EDX and elemental mapping results establish the presence and distribution of Eu, Zn and O for the ZEO thin films. The Hall measurement results demonstrate that the Eu doped ZnO (ZEO) films have n-type conduction. The n-type ZEO thin films with comparatively low resistivity of 2.93 × 10 − 3 Ω cm and relatively high carrier concentration of 5.18 × 10 19 cm −3 are obtained at doping level of 2 at.%. The mobility values of ZEO thin films decrease from 28.4 cm 2 V − 1 s −1 to 1.02 cm 2 V − 1 s −1 with increase of dopant concentration.
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