Abstract
Nanoporous alumina thin films were fabricated via an electrochemical anodization process and utilized as patterning masks for a plasma etching process to convert nanohole patterns as photonic crystal slabs to the surfaces of GaAs and GaN semiconducting materials. The nanostructural GaAs and GaN surfaces enhance the light extraction of the photoluminescence spectra at wavelengths of 857 and 456 nm, respectively. The enhancement mechanism has been analyzed in terms of a photon tunneling process of surface evanescent waves. The enhanced transmissions at the surface regions are related to the removal of absorption modes at 640 and 440 nm for GaAs and GaN materials, respectively.
Published Version
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