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Abstract
Silicon nanowire (SiNW) arrays formed by metal-assisted chemical etching of boron low-doped crystalline silicon (c-Si) substrates were studied regarding enhanced efficiency of optical interactions in them. Along with high diffuse reflection of the structures under study, Raman and third-harmonic signals exhibited an order of magnitude growth compared to c-Si response in the near-infrared spectral region. Changes in the orientation dependencies of the third-harmonic intensity with SiNW length increase promoted the explanation of the optical peculiarities of SiNW arrays. Cross-correlation of the scattered radiation function evidenced that the effects could be explained by enhanced photon lifetime inside mesoscopic structure of SiNW arrays due to multiple scattering. Hence a correlation between the photon lifetime and the Raman and third-harmonic efficiency in SiNWs was revealed.
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