Abstract
In this work, porous BiVO4 thin films were deposited on the FTO glass through a spin-coating deposition method and their photoelectrochemical (PEC) properties were investigated. Further, the BiVO4 thin film was modified with a NiMoO4 thin layer for enhancing its PEC activity. It is demonstrated that the applied bias photo-to-current conversion efficiency is increased by 63% after a surface modification, which is ascribed to both the formation of a p–n junction and the suppressed carrier recombination rate by terms of the electrochemical impedance spectroscopy. Finally, a schematic band model is also proposed to clarify the charge carrier transfer mechanism which is responsible for the enhanced PEC performance.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
