Abstract
First-principles calculations and quantum transport simulations were performed to investigate the photogalvanic effect (PGE) in the high magnetic transition temperature ferromagnetic two-dimensional (2D) semiconductor MnNCl and the 2D lateral MnNI-MnNCl heterostructure. The MnNI-MnNCl heterostructure exhibits significantly enhanced non-centrosymmetric properties, resulting in increased PGE photocurrent and spin current around 0.4 eV. Compared to MnNCl, the photocurrent is amplified by 4–6 orders of magnitude and demonstrates excellent polarization sensitivity, with an extinction ratio reaching 83.92. These results underscore the potential of MnNCl-MnNI lateral heterostructures for use in self-powered, polarization-sensitive infrared detectors.
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