Abstract
Population kinetics of non-equilibrium optical phonons in strongly photo-excited intrinsic germanium have been studied on a picosecond time scale using time-integrated and time-resolved Raman scattering measurements at 295K. Both types of experiments indicate that the phonon occupation number increases sub-linearly with photo-generated carrier densities above 10 19cm -3. A theoretical model of carrier and phonon kinetics indicates that the sub-linearity can be primarily attributed to non-equilibrium phonon reabsorption by holes undergoing intra-valence band transitions. From theory-based calculations of the increase in non-equilibrium phonon absorption we infer an increase in the phonon annihilation rate from ∼ 0.25 ps -1 at low carrier densities to ∼ 5.5 ps -1 at carrier densities ∼ 2 × 10 20cm -3.
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