Abstract

Picosecond Raman scattering is a useful probe of non-equilibrium photo-excited carrier and phonon dynamics in group III-V and group IV semiconductors. In group III-V materials, time-resolved Raman scattering is used to explicitly demonstrate the strong long-range coupling of non-equilibrium free carriers with longitudinal optic phonon modes. This effect is exploited to provide a probe of the non-equilibrium free carrier density. In group IV materials, the absence of long range plasma-lattice interactions enables the generation and observation of non-equilibrium optical phonon modes in the presence of photo-excited plasma densities as high as 1 x 1019 cm<sup>-3</sup>. The non-equilibrium phonons in Ge and Gel_xSix alloys exhibit significantly different properties than those observed previously by others in GaAs and Ga1_xA1xAs.

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