Abstract
Top-contact thin film transistors with ZnO as the channel layer and thermally grown SiO 2 as the gate dielectric were fabricated by using rf sputtering. The performances of ZnO-TFTs with different thicknesses of the active layer were investigated and the optimized condition was obtained. With the active layer thickness from 25 to 70 nm, the leakage current of devices increased from 10 −10 to 10 −8 A, and the on/off ratio decreased from 1.2×10 7 to 2×10 4. Atomic force microscope research indicated that with the thickness increased, the surface morphology of the active layer improved noticeably at first and then deteriorated. The 25-nm-thick ZnO TFT had the best surface morphology, and showed the best performance with a field effect mobility of 5.1 cm 2/V S, on/off ratio of 1.2×10 7 and threshold voltage of 20 V. This indicates that the surface properties of the channel layer have crucial affects on the performances of ZnO-TFTs.
Published Version
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