Abstract
Perovskite light-emitting diodes (PeLEDs) are widely used in optoelectronics due to their excellent performance. The hole transport layer (HTL) plays a crucial role in the performance of the device. In this paper, we prepared quasi-two-dimensional perovskite light-emitting diodes with doping CsBr into PEDOT:PSS as a composite HTL, and investigated the optoelectronic properties of the devices. The maximum luminance of the CsBr-doped device was 6652 cd/m2 and the maximum current efficiency (CE) was 7.55 cd/A, which were increased by 112 % and 80 % compared with the undoped device, respectively. This is primarily due to the PEDOT:PSS/CsBr composite HTL optimizes the morphology of the perovskite film, passivates the defects of the perovskite film, and suppresses the exciton quenching at the HTL/perovskite emission layer (EML) interface. Meanwhile, CsBr doping helps to enhance the hole transport ability of HTL and thus increase the exciton recombination efficiency, which improves the device performance. The results in this paper can provide experimental support for the development of PeLEDs.
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