Abstract
Abstract In this work, The performance of green quantum dots light-emitting diodes (QLEDs) were enhanced by dispersing Ag nanowires (NWs) into NiO hole injection layer (HIL). Highly bright green QLEDs with a maximum luminance of 32780 cd m−2 and current efficiency of 4.1 cd A−1, exhibiting 50% improvement compared with the device without Ag NWs. The improved performance may be attributed to the significant increase in the conductivity and hole injection rate as a result of the introduction of Ag NWs and the good matching between the resonance frequency of the localized surface plasma resonance (LSPR) generated by NWs and QDs, as well as the suppressed Auger recombination of QDs layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call