Abstract
AbstractNew evidence for the enhanced oxygen diffusion in Czochralski silicon at temperatures ranging from 450 °C to 650 °C has been obtained from oxygen precipitation in prolonged annealing of 750 °C following a variety of pre‐treatments involving slow ramping anneal or single‐step anneal. The two previously proposed fast‐diffusing species of oxygen–vacancy and oxygen–silicon‐interstitial to understand the enhanced oxygen diffusion at low temperatures are questioned. Moreover, the reason as why significant oxygen precipitation can occur at such a low temperature of 750 °C has been elucidated based on the enhanced oxygen diffusion at low temperatures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
