Abstract
We report on luminescence properties of GaInNAs/GaNAs/GaAs quantum-well structures emitting light at the wavelength of 1.3 μm, grown by molecular beam epitaxy. The design of the structure consists of a strain-mediating GaInNAs layer, sandwiched between a highly compressive GaInNAs quantum well and a strain-compensating GaNAs layer. Insertion of the strain-mediating layer improves optical activity of the quantum well and shifts the spectrum to longer wavelengths.
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