Abstract
Atomically thin transition metal dichalcogenide based heterostructures are of significant interest for the electronic and optoelectronic device applications. Growth of atomically thin heterostructures have gained remarkable importance due to the unusual electrical response and optical emission at the interface. Here, facile chemical vapour deposition growth of n-N type MoS2-WS2 heterostructure is demonstrated. Multifold enhancement in photoluminescence emission at the interface of MoS2-WS2 heterostructure with local excitonic amplifications arising at the interface is observed. The atomic level structure of interface has been investigated with the aid of aberration corrected scanning transmission electron microscopy. Electrical properties of MoS2-WS2 heterostructure with n-N semiconductor junction are systematically probed using micromanipulators interfaced with scanning electron microscope. Our microscopic and spectroscopic investigations along with electrical and optical responses at the interface contribute to the fundamental knowledge to empower the development of optical devices based on two dimensional heterostructures with enhanced emissions.
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