Abstract
We study the optical non-linearity of strained (InGa)As sidewall quantum wires grown by MBE on patterned GaAs (3 1 1)A substrates. The wires are formed at the sidewall of shallow mesa stripes along [0 1 −1] due to the preferential migration of surface group-III atoms from the mesa top and bottom toward the sidewall. Strained In 0.2Ga 0.8As quantum wires exhibit a blue shift of the photoluminescence of 17 meV with increasing excitation power which is about one order of magnitude larger compared to that of the adjacent quantum well of 1–2 meV. The blue shift is reduced from 7 meV for an In composition of 0.1 to zero for unstrained GaAs wires. This enhanced optical non-linearity is assigned to additional lateral optical band-gap modulation due to internal piezoelectric fields effective in the present quantum-wire structure.
Published Version
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