Abstract
The effects of inserting GaInNAs single or stepped strain-mediating layers between GaInNAs quantum wells and the surrounding matrix on the structural and optical properties of 1.3μm GaInNAs∕GaAs multiple quantum-well (QW) structures have been investigated. Compared to control samples with simple GaInNAs multiple quantum wells, samples with strain-mediating layers exhibit improved optical and structural properties. A further strong enhancement of photoluminescence efficiency at room temperature and a remarkable reduction of emission linewidth of GaInNAs multiple QWs have been observed using a compositionally stepped strain-mediating layer. These results imply that the strain profile between the quantum well and the surrounding matrix has a major effect on the optical and structural qualities of GaInNAs quantum wells.
Published Version
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