Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide

Abstract

Electrical contact to silicon carbide with low contact resistivity and high stability is a critical requirement for SiC-based microsystem and nanosystem technology for harsh environment applications. In this letter, nanocrystalline graphitic carbon is grown at the interface between SiC and Pt to lower the Ohmic contact resistivity and enhance the stability of Pt contacts to polycrystalline 3C-SiC operated at elevated temperatures. Analysis shows that reduced barrier height, oxide-free surface, reduced density of vacancy defects, and suppressed reactivity between Pt and SiC are likely responsible for the reduced Ohmic contact resistivity and high thermal stability of Pt contacts to graphitized SiC.