Abstract
Using our computer programs, numerical simulations of photoelectric and fluctuating phenomena were carried out in diode structures of the CdHgTe mesa in the P+ν(π)N+ configuration operating at 230 K and 300 K. These phenomena were analyzed in structures where additional energy barriers at the absorber boundary were applied. Exclusion and extraction of charge carriers in the absorber area after biasing the structures with reverse voltage reduces their concentration by more than an order of magnitude. Reduction of carrier concentration has a positive effect on the increase of the absorption coefficient due to reduction of the Burstein–Moss effect, increases the resistance and electro-optical gain, and effectively suppresses generation and thermal recombination. It is possible to obtain 70% of quantum efficiency in biased photodiodes. It was shown that a non-equilibrium long-wave photodiode working at room temperature can have a normalized detectivity of over 109 cmHZ1/2W−1 for radiation with 10.6 μm wavelength. The results of our calculations and their analysis are illustrated by numerous figures.
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