Abstract

Spin-polarized tunnel injection and extraction of charge carriers can give rise to magneto-resistance in organic spin valves. To describe this magneto-resistance, the tunneling process is modeled as a transfer of electrons through a thin insulating layer between a ferromagnetic contact and an organic semiconductor. Transition rates between extended states in the metal and model “molecular” orbitals localized at the semiconductor/insulator interface are calculated based on a transfer Hamiltonian. The transition rates are then used in a rate equation model to calculate the injected current for the two spin types and the associated magneto-resistance of organic spin valves. Consistent with experimental data, it is found that the magneto-resistance can be of either sign and its magnitude strongly decreases with the applied bias.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.