Abstract
Spin-polarized tunnel injection and extraction of charge carriers can give rise to magneto-resistance in organic spin valves. To describe this magneto-resistance, the tunneling process is modeled as a transfer of electrons through a thin insulating layer between a ferromagnetic contact and an organic semiconductor. Transition rates between extended states in the metal and model “molecular” orbitals localized at the semiconductor/insulator interface are calculated based on a transfer Hamiltonian. The transition rates are then used in a rate equation model to calculate the injected current for the two spin types and the associated magneto-resistance of organic spin valves. Consistent with experimental data, it is found that the magneto-resistance can be of either sign and its magnitude strongly decreases with the applied bias.
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