Abstract
This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the 660nm RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength (1-λ) optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from 18.07to12.21ns, was obtained. The corresponding modulation frequency can be increased from 19.54to30.21MHz.
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