Year-end Sale % OFF 
Abstract
We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a p-n junction. Since a single p-type thin film only exhibits a small magneto-optical Kerr effect, magneto-optical Kerr spectroscopy cannot be used to determine the carrier densities of such a film with high sensitivity. However, because the electric field is enhanced at the p-layer in a p-n junction due to the interference between the THz waves that are reflected at the highly doped substrate and the p-layer at the surface, it is possible to conduct magneto-optical Kerr spectroscopy with a higher sensitivity. We numerically calculate and experimentally determine the spectra of the ellipticity and polarization rotation angles for single n- and p-GaAs epitaxial layers and GaAs-based photovoltaic devices with a p-i-n structure and evaluate the carrier densities of the n- and p-layers. At normal incidence, this method has a high spatial resolution, which is beneficial for imaging of large-area devices.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Infrared, Millimeter, and Terahertz Waves
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
