Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon.

Xuqiang Liu,Yi Lu,Liang Qiao,Jianyong Liu,Kunlin Wu,Dehui Zou,Guixia Yang,Jiayun Xu,Junjie Li,Xueyang Lv

doi:10.3390/nano10050886

Abstract

Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 109–5 × 1010 n cm−2 s−1. The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects (Vr) under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the (Vr) is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p+-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.

Highlights

The outer space radiation induced by high-energy particles such as electrons, protons, neutrons, γ-rays and heavy ions can cause radiation-related damages and even the malfunction or even failure of the spacecraft electronic system
Total ionizing dose (TID) [1,2] and enhanced low dose rate sensitivity (ELDRS) effects [3,4] are the main causes for the functional degradation and performance failure of semiconductor devices
We study the influence of the enhanced low-neutron-flux sensitivity (ELNFS) effect on the performance of Si-based bipolar transistors induced by boron-doped silicon materials

Summary

Introduction

The outer space radiation induced by high-energy particles such as electrons, protons, neutrons, γ-rays and heavy ions can cause radiation-related damages and even the malfunction or even failure of the spacecraft electronic system. Total ionizing dose (TID) [1,2] and enhanced low dose rate sensitivity (ELDRS) effects [3,4] are the main causes for the functional degradation and performance failure of semiconductor devices. The TID and ELDRS effects are common and well-known, e.g., in space-based applications of semiconductor devices. The TID and the ELDRS effects are induced by ionization damages in semiconductor devices. The ELDRS effect can greatly reduce the damage threshold of semiconductor devices because the radiation can destroy semiconductor devices under a low absorption dose rate [4]. Even the small-dose radiation can cause the performance degradation of semiconductor devices and the failure of the whole electronic system, which is a disaster to a spacecraft. The ELDRS effect in semiconductor devices should be further explored

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Conclusion