Enhanced low dose rate effect of the radiation-sensitive field effect transistors developed by the National Microelectronics Research Centre

Abstract

An enhanced low dose rate effect (ELDRE) was observed in the radiation-sensitive field effect transistors (RADFETs) developed by the National Microelectronics Research Centre (NMRC) for a low total accumulated dose of less than ∼45 Gy in silicon, or 45 Gy(Si). The effect was seen to persist even after∼8 days of annealing at room temperature, implying that it was not a transient effect but rather a permanent one. On the other hand, the ELDRE was seen to disappear at high total doses of above ∼90 Gy(Si).