Enhanced low dimensional MOSFETs with variation of high K dielectric materials

Abstract

This works shows the effect of different dielectric material which are used in gate dielectric material in metal oxide semiconductor field effect transistor (MOSFET). Dielectric material like silicon dioxide <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{SiO}_{2})$</tex> , silicon nitride <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{Si}_{3}\mathrm{N}_{4})$</tex> , hafnium dioxide <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{HfO}_{2})$</tex> are used in this study. Changing the gate dielectric material in MOSFETs can reduce leakage current, hence improving the device's performance metrics. For device designing and simulations computer added design tool Cogenda TCAD is used. After the simulation results are verified using MOSFET reference data, the device structure is designed at 15 nm node technology. Simulation results shows the reduction of OFF current (IoFF), higher on current to off current ratio (ION/IoFF), near ideal subthreshold slope (SS), and enhanced drain induced barrier lowering (DIBL). The proposed circuit shows the improved IOFF of the device by 2 to 3 times, ION by 1.5 times, trans-conductance (gm) by 2 times, output conductance (gd) by 1.65%, and ION/IoFF ratio by <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10^{5}$</tex> . Proposed device is a better replacement to present technology devices in terms of low power and high switching applications.