Abstract
We report characteristics of the InGaN/GaN light emitting diodes (LEDs) grown by selective metallorganic chemical vapor deposition with embedded air prisms (EAPs) via a wet etching process. At first, aqueous KOH solution, an etchant, removed the SiO 2 mask pattern to facilitate a subsequent etching through N-face GaN to achieve crystallographically defined prism shapes. Well-aligned arrays of air prisms are formed and distributed throughout the entire device. The EAP―LED output power was increased 2.1 times compared with the conventional LED. The higher light extraction is attributed to the improvement in the scattering of photons at the EAP interface due to the large index difference between GaN and air prisms.
Published Version
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