Abstract
We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33–48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.