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Abstract
We report a 1.8 times improved light extraction efficiency for truncated cone AlGaN DUV (275 nm emission) micropixel LEDs when the pixel size was reduced from 90 to 5 μm. This is a direct consequence of reducing the re-absorption of sideways-travelling photons, as the lateral absorption length was measured to be 15 μm using cathodoluminescence. We also investigated the effect of an Al2O3/Al sidewall coating on the device performance which led to an on-wafer pulsed-mode brightness of 10.3 kW cm−2 from a single 5 μm truncated cone micropixel.
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