Abstract
We demonstrate that the nanoscopic block copolymer patterns on GaN can enhance light extraction efficiency of GaN-based light emitting diodes. Nanoporous patterns were fabricated on a bare GaN substrate via self-assembly of poly(styrene-b-methyl methacrylate) block copolymers from which PMMA microdomains were selectively removed later on. A bare GaN surface was treated with a photo-crosslinkable thin layer of poly(styrene-r-methyl methacrylate) random copolymers to tune the cylindrical microdomain orientations. The nanoporous block copolymer thin film was controlled to be thicker than its typical repeat period in bulk by incorporating PMMA homopolymer into block copolymer. Consequently, the light extraction efficiency in photoluminescence spectra could be tuned with the thickness of nanopatterned thin film on GaN.
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