Abstract
AbstractThe introduction of a low‐temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe‐contaminated Si wafers for different annealing durations.Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short‐tail extended P diffusion gettering is included in an industrial fabrication process. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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