Abstract
III‐Nitride semiconductor materials are considered as promising candidates for photoelectrodes (PEs) due to their adjustable direct band gap covering a very broad spectral range. In this study, InGaN/GaN based p–i–n photoelectrodes have been fabricated and nano‐sized surface roughening process has been applied. The photocurrent gets 2.5 times enhancement and the incident photon conversion efficiency (IPCE) is improved to be ∼30% at the wavelength of 400 nm. In addition, the turn‐on voltages of InGaN/GaN‐based PEs have been effectively reduced from +0.8 V down to about −0.4 V (vs. reversible hydrogen potential, RHE). Such improvements are mainly attributed to reduced dislocation density, increased surface area, and optimized build‐in electrical field. These findings give innovative insight to improve photoelectrochemical devices for hydrogen generation.
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