Abstract
Cross-sectional scanning tunneling microscopy is used to study InGaAs/InP quantum-well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum well and barrier layers after annealing. This is interpreted in terms of enhanced group-V compared to group-III interdiffusion.
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