Abstract
The influence of tensile mechanical strain on gate-induced floating-body effect (GIFBE) in advanced partially depleted SOI n-MOSFETs was investigated. Both drain current and mobility enhance after applying strain due to the reduction of average transfer effective mass. However, it was found that the GIFBE becomes serious under the mechanical strain. To explain this phenomenon, we first clarify the mechanism of GIFBE using different operation conditions. The experiment results indicate that the GIFBE can be attributed to the anode hole injection (AHI) rather than the widely accepted mechanism of electron band (EVB) tunneling. Based on the AHI model, the enhanced GIFBE under the mechanical strain is mainly due to the narrowing of band gap induced by the strain in the poly-gate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.