Abstract
In this study, indium doped ZnO (IZO) nanostructures were fabricated successfully on a glass substrate. It was found that the IZO nanostructures grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The composition of the doped zinc oxide (ZnO) nanostructures was confirmed by X-ray diffraction (XRD) and energy dispersive X-ray. The turn-on fields of ZnO and IZO nanostructures were 4.21 and 3.86 V/μm, and field enhancement factors (β) were 2695 and 5015, respectively. These results show that the field emission properties of the IZO nanostructures are better than those of ZnO nanostructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
