Abstract
Ga-doped In2O3(ZnO)3 nanobelts were successfully fabricated via a simple chemical vapor deposition (CVD) process. The morphology, microstructure, and composition of the nanobelts were characterized by scanning electron microscopy, high resolution transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectroscopy. The results confirm the formation of In2O3(ZnO)3 superlattice nanobelts doped with Ga. The field-emission studies show a low turn-on electrical field, high field enhancement factor, and a good stability of the emission current. These results are valuable for the design, fabrication, and optimization of field emitters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
