Abstract
In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ∼110 nm and length of∼30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (∼0.95 V/μm) and threshold field (∼3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.
Highlights
Cold cathode electron sources are very promising in different field emission microelectronic devices such as fast-imaging X-ray source, nanoscale ultraviolet photodetectors, high brightness field emission lamps, multiple e-beam lithography array sources.[1,2,3,4,5]
The electrons are injected into the vacuum from the vacuum surface by quantum tunneling under certain applied external electric field
The field emission process is a theoretical model proposed by Fowler and Nordheim, which is based on quantum mechanical tunneling.[7,8]
Summary
Micro-nano preparation technologies for manufacturing field emission devices have been developed. To meet this demand, a wide variety of metal oxide semiconductor nanostructures have been studied including ZnS, TiO2, CuO, SnO2, etc.[11,12,13] Among these materials, Silicon carbide (SiC) as a significant third-generation semiconductor material, with wide band gap (2.2-3.3 eV), mechanical stabilities, high thermal stability, high electrical and thermal conductivities, which is considered as one of the most promising materials for the potential application in the field of field emission devices.[14] Previously, in depth investigations into the growth of various SiC nanostructure morphology and tailoring the bandage to lower the field emission properties have been carried out. Field emission properties are characterized and emission stability is carefully studied under bending conditions
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