Abstract
The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs.
Highlights
Magnetic semiconductors have attracted extensive attention in the past decade due to their potential applications for spintronics [1,2]
The Mn content in the wires reached a notable 1.31%, and the ferromagnetism was enhanced by two orders of magnitude compared with the conventional GaN:Mn film
Nanoscale GaN:Mn wires with 1.31% Mn doping were grown on the top of a ridge of GaN by metalorganic chemical vapor deposition (MOCVD)
Summary
Magnetic semiconductors have attracted extensive attention in the past decade due to their potential applications for spintronics [1,2]. With no strict demand for Semiconductor nanostructures in low-dimension are good subjects for both studies on the nanoscale-patterned substrate or growth conditions, epitaxy growth on ridges is a popular way to physics of the material and potential applications in devices [21,22,23]. It is reported that the unique stress field distribution at the nanoscale-patterned substrate or growth conditions, epitaxy growth on ridges is a popular way to ridge top favors further Mn doping [25], providing an approach toward enhanced magnetism. When further combined with the faults (SFs) were observed in the wires by transmission electron microscopy (TEM), and they showed micro-Raman results, the magnetism in GaN:Mn might be related to Mn concentration but a correlation with the Mn doping distribution.
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