Abstract
Bi 3.99Ti 2.97V 0.03O 12 (BTV) thin films were grown by pulsed laser deposition at substrate temperatures ranging between 650 and 750 °C. The structural phase, and orientation of the deposited films were investigated in order to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temperature was increased to 700 °C, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temperatures polycrystalline films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization ( P r) as well as dc leakage current values on the growth temperature. The film deposited at 675 °C showed a very large 2 P r of 42 μC cm −2, which is the largest for BTV thin films among the values reported so far.
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