Abstract
Ferroelectric nitrogen-doped Bi4Ti3O12 (BIT) and nitrogen-substituted BIT (N-BIT) thin films are prepared by an radiofrequency-magnetron-sputtering method such that nitrogen atoms are incorporated into oxygen sites. The remnant polarization Pr and the coercive field Ec of the nitrogen-doped BIT are enhanced relative to those of the undoped BIT (Figure). The leakage current of the nitrogen-doped BIT decreases and the fatigue properties improves compared to the undoped BIT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
