Abstract
Single-crystal $$\hbox {BaTiO}_3$$ (BTO) films were prepared by pulsed laser deposition (PLD) on (100) $$\hbox {SrRuO}_3$$(SRO) buffered $$\hbox {SrTiO}_3$$(STO) substrates, which were treated by rapid thermal processing (RTP) in the temperature range of 600–750 $$^\circ {\hbox {C}}$$. The XRD, Ferroelectric test system, Hall effect Test Station and current–voltage (I–V) characteristics were used to study microstructure and electrical properties. The results show that the RTP temperature can affect the microstructure of films, the contact of the interfaces and ferroelectric properties. The films exhibit small leakage current, resistance, barrier height, and better ferroelectric properties treated by RTP at $$650 \,^\circ {\hbox {C}}$$.
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